Silicon germanium emitter

ABSTRACT

Disclosed are an improved hetero-junction bipolar transistor (HBT) structure and a method of forming the structure that incorporates a silicon-germanium emitter layer with a graded germanium profile. The graded germanium concentration creates a quasi-drift field in the neutral region of the emitter layer. This quasi-drift field induces valence bandgap grading within the emitter layer so as to accelerate movement of holes from the base layer through the emitter layer. Accelerated movement of the holes from the base layer through the emitter layer reduces emitter delay time and thereby, increases the cut-off frequency (f T ) and the maximum oscillation frequency (f MAX ) of the resultant HBT.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to hetero-junction bipolar transistors and, moreparticularly, to a hetero-junction bipolar transistor structure with anemitter that exhibits a reduced delay time and a method of forming thestructure.

2. Description of the Related Art

As the switching speed of silicon germanium (SiGe) hetero-junctionbipolar transistors (HBTs) approaches and extends beyond 350 GHz, thebase transit time for such HBT devices is in the range of approximately100 fs. The emitter delay time for such devices is typically smallerthan the base transit time. However, as base size is scaled down, theemitter transit time is becoming an increasing portion of the overallHBT forward transit time. In the near future emitter delay time mayactually be of the same magnitude as base transit times and mayeffectively limit the transistor AC performance.

Thus, there is a need in the art for a SiGe HBT that exhibits a reducedemitter transit time in order to obtain an improved overall forwardtransit time and improved switching speed performance.

SUMMARY OF THE INVENTION

In view of the foregoing, disclosed herein is a hetero-junction bipolartransistor (HBT) that incorporates a silicon-germanium emitter layerwith a graded germanium concentration profile in order to reduce theemitter delay time and, thereby, increase the cut-off frequency (f_(T))and the maximum oscillation frequency (f_(MAX)).

An embodiment of the HBT structure of the invention comprises a firstconductivity type mono-crystalline silicon-germanium emitter layer(e.g., a emitter layer doped with an n-type dopant, such as arsenic(As), phosphorus (P), or antimony (Sb)). The HBT structure furthercomprises a second conductivity type mono-crystalline base layer (e.g.,a base layer doped with a p-type dopant, such as boron (B)) adjacent toa first side of the emitter layer (e.g., below the emitter layer) and afirst conductivity type polysilicon electrode (e.g., a polysiliconelectrode doped with an n-type dopant) that is adjacent to a second sideof the emitter layer (e.g., above the emitter layer).

More specifically, the emitter layer of the HBT structure of theinvention comprises a depletion region adjacent to the base layer and aneutral region between the depletion region and the polysiliconelectrode. The emitter layer also comprises germanium. The concentrationof germanium in the emitter layer is graded such that it increasesbetween the first side that is adjacent to the base layer and the secondside that is adjacent to the polysilicon electrode. Various gradedgermanium concentration profiles are anticipated. For example, thegradient of the germanium concentration can increase linearly and canrange from approximately 0% adjacent to the base layer up to between 10%and 40% adjacent to the polysilicon electrode (e.g., preferably up toapproximately 30% but no greater than 40%). The gradient of thegermanium concentration can also increase exponentially and can rangefrom approximately 0% adjacent to the base layer up to between 10% and40% adjacent to the polysilicon electrode (e.g., preferably up toapproximately 30% but no greater than 40%). Alternatively, theconcentration of germanium can plateau at approximately 0% adjacent tothe base layer and ramps up from approximately 0% up to between 10% and40% adjacent to the polysilicon electrode. By incorporating thegermanium in graded concentrations through the emitter layer aquasi-drift field is created in the neutral region of the emitter layer.This quasi-drift field lowers the emitter delay time for the neutralregion so as to increase cut-off frequency (f_(T)). The quasi-driftfield is induced by the valence bandgap grading across the neutralregion so as to accelerate movement of minority carriers (e.g., holes)from the base layer through the emitter layer which increases thecut-off frequency (f_(T))

An embodiment of a method of forming the hetero-junction bipolartransistor structure of the invention comprises forming a firstconductivity type collector layer (e.g., a silicon collector layer dopedwith an n-type dopant, such as arsenic (As), phosphorus (P), or antimony(Sb), on a p-type substrate) in a second conductivity type substrate(e.g., a p-type substrate). Then, a mono-crystalline silicon layer isdeposited (e.g., by a low temperature thermal epitaxy (LTE) process orMolecular Beam Epitaxy (MBE)) on the collector layer.

During this deposition process, a pure silicon buffer layer can first bedeposited onto the collector layer. Then, germanium can be introducedinto a lower portion of the silicon layer. Specifically, germanium canbe introduced with a rapid ramp up in the germanium concentration (e.g.,up to a maximum of approximately 40%). After the ramp up phase, theconcentration of germanium introduced into the lower portion of thesilicon layer can plateau for a period of time and then, begin a slowramp down to approximately 0% germanium. Additionally, after the startand before the finish of the ramp down phase of introducing germaniuminto the lower portion of the silicon layer, a second conductivity typedopant (e.g., a p-type dopant, such as boron (B)) can simultaneously beintroduced into this lower portion of the silicon layer. The depositionprocesses, described above, for the lower portion of the silicon layereffectively form the second conductivity type base layer (e.g., p-typebase layer) of the HBT of the invention.

After the lower portion of the silicon layer is doped (e.g., with thep-type dopant) and the germanium concentration is ramped down, thedeposition of the silicon layer continues in order to form an upperportion of the silicon layer. During the deposition of this upperportion of the silicon layer, germanium is again introduced.Specifically, germanium is introduced into the upper portion of thesilicon layer such that the concentration of germanium is graded. Forexample, the germanium concentration can be increased linearly as thesilicon is deposited (e.g., steadily ramping up from approximately 0%adjacent to the base layer up to between 10% and 40% at the top surfaceof the upper portion). The germanium concentration can be increasedexponentially as silicon layer is deposited (e.g., slowly and then morequickly ramping up from approximately 0% adjacent to the base layer upto between 10% and 40% at the top surface of the upper portion).Alternatively, the germanium concentration can be maintained atapproximately 0% adjacent to the base layer and can then ramp up fromapproximately 0% up to between 10% and 40% at the top surface of theupper portion.

Once the silicon layer is deposited, a first conductivity typepolysilicon layer (e.g., a polysilicon layer doped with an n-typedopant, such as arsenic (As), phosphorus (P), or antimony (Sb)) can beformed adjacent to (e.g., deposited on) the upper portion of the siliconlayer. A thermal anneal process is then performed in order to diffusethe first conductivity type dopant from this polysilicon layer into theupper portion of the silicon layer to form the first conductivity typeemitter layer (e.g., n-type emitter layer) of the HBT structure of theinvention. Alternatively, the emitter layer can be formed by an in-situdoping process that simultaneously introduces both the germanium and theappropriate conductivity type dopant (e.g., the n-type dopant) into theupper portion of the silicon layer as it is being deposited.

Therefore, by forming the HBT structure using the method describedabove, the emitter layer is formed with a depletion region adjacent tothe base layer and a neutral region between the depletion region and thepolysilicon layer that contains a quasi-drift field which is created bythe graded germanium concentrations.

These, and other, aspects and objects of the present invention will bebetter appreciated and understood when considered in conjunction withthe following description and the accompanying drawings. It should beunderstood, however, that the following description, while indicatingembodiments of the present invention and numerous specific detailsthereof, is given by way of illustration and not of limitation. Manychanges and modifications may be made within the scope of the presentinvention without departing from the spirit thereof, and the inventionincludes all such modifications.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be better understood from the following detaileddescription with reference to the drawings, in which:

FIG. 1 is a schematic diagram of an embodiment of a HBT structure 100 ofthe invention;

FIGS. 2 a-c are schematic diagrams illustrating possible gradedgermanium concentration profiles across the emitter, base and collectorlayers of FIG. 1;

FIG. 3A is an energy band diagram for a conventional HBT structure;

FIG. 3B is an energy band diagram for the HBT structure of theinvention;

FIG. 4 is a flow diagram illustrating a method of the invention;

FIG. 5 is a schematic diagram illustrating a partially completed HBTstructure of the invention;

FIG. 6 is a schematic diagram illustrating a partially completed HBTstructure of the invention; and

FIG. 7 is a schematic diagram illustrating a partially completed HBTstructure of the invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS OF THE INVENTION

The present invention and the various features and advantageous detailsthereof are explained more fully with reference to the nonlimitingembodiments that are illustrated in the accompanying drawings anddetailed in the following description. It should be noted that thefeatures illustrated in the drawings are not necessarily drawn to scale.Descriptions of well-known components and processing techniques areomitted so as to not unnecessarily obscure the present invention. Theexamples used herein are intended merely to facilitate an understandingof ways in which the invention may be practiced and to further enablethose of skill in the art to practice the invention. Accordingly, theexamples should not be construed as limiting the scope of the invention.

Referring to FIG. 1, disclosed is a hetero-junction bipolar transistor(HBT) structure 100. The structure 100 comprises two adjacent p-njunctions. Specifically, the HBT 100 comprises a first conductivity typecollector layer 102 (e.g., a mono-crystalline silicon collector layerdoped with an n-type dopant, such as arsenic (As), phosphorus (P), orantimony (Sb)). This collector layer 102 can be formed, for example, byimplanting the first conductivity type dopant into a second conductivitytype semiconductor substrate (e.g., a silicon substrate doped with ap-type dopant, such as boron (B)). A second conductivity typemono-crystalline intrinsic base layer 103 (e.g., a p-type silicon baselayer) is positioned adjacent to (e.g., above) the collector layer 102.This intrinsic base layer 103 may further be connected on either side toraised extrinsic base layers 104. A first conductivity type emitterlayer 110 (e.g., an n-type emitter layer) is adjacent to (e.g., above)the base layer 103. The emitter layer 110 is contacted by an electrode(e.g., a first conductivity type polysilicon electrode 105) between theraised extrinsic base layers 104. The junctions 121 and 122 between thelayers 102, 103 and 110 (e.g., between the collector layer 102 and thebase layer 103 and between base layer 102 and the emitter layer 110)comprise shared depletion regions. The remaining portions of the layers102, 103, and 110 comprise neutral regions (also referred to in the artas quasi-neutral regions).

Germanium can be introduced into the base layer 103 of the HBT structureof the invention. Germanium has a lower energy bandgap as compared tosilicon (e.g., approximately 0.66 eV for germanium as compared toapproximately 1.12 eV for silicon). Thus, introducing germanium into thebase layer 103 reduces the overall energy band gap of the base layer103. Additionally, referring to FIG. 2, having a graded germaniumconcentration profile with a steep ramp up 201 at the junction betweenthe collector layer 102 and base layer 103, a plateau 202 and a steadyramp down 203 towards the junction between the base layer 103 and theemitter layer 110 can be used to create a quasi-drift field in theneutral region of the base layer 103. This base layer quasi-drift fieldwill accelerate minority carriers (e.g., electrons in a p-type base)from the emitter to the collector effectively lowering the base layer103 transit time, thereby, increasing the current-gain cut-off frequency(f_(T)).

Currently, the switching speeds of silicon germanium (SiGe)hetero-junction bipolar transistors (HBTs) are reaching up to and beyond350 GHz, the base transit time for such HBT devices is in the range ofapproximately 100 fs and the emitter layer 110 delay time is typicallysmaller than this base transit time. However, as base layer 103 size isscaled down, the emitter layer 110 transit time is becoming anincreasing portion of the total forward transit time. In the near futureHBT structures may be formed such that the emitter layer 110 transittime is of the same magnitude as the base layer 103 transit time, thus,limiting the transistor AC performance. Consequently, as mentionedabove, there is a need in the art for a SiGe HBT that exhibits a reducedemitter transit time in order to obtain an improved overall forwardtransit time and improved switch speed performance.

In view of the foregoing, the hetero-junction bipolar transistor 100(HBT) of the present invention further incorporates germanium into theemitter layer 110 as well as into the base layer 103. Specifically, theHBT 100 comprises a silicon-germanium emitter layer 110 with a gradedgermanium concentration profile that creates a quasi-drift field inorder to reduce the emitter delay time and, thereby, increase thecurrent-gain cut-off frequency (f_(T)) and the maximum oscillationfrequency (f_(MAX)).

More specifically, referring to FIG. 1 and particularly, to the explodedportion 150 of FIG. 1, an embodiment of the HBT structure 100 of theinvention comprises a first conductivity type mono-crystallinesilicon-germanium emitter layer 110 (e.g., a emitter layer doped with ann-type dopant, such as arsenic (As), phosphorus (P), or antimony (Sb)).The HBT structure 100 further comprises a second conductivity typemono-crystalline base layer 103 (e.g., a base layer doped with a p-typedopant, such as boron (B)) adjacent to a first side of the emitter layer(e.g., below the emitter layer) and a first conductivity type electrode105 (e.g., a polysilicon electrode doped with an n-type dopant) that isadjacent to a second side of the emitter layer 110 (e.g., above theemitter layer).

This emitter layer 110 comprises a depletion region 111 at the junction122 between the base layer 103 and the emitter layer 110 and a neutralregion 112 between the depletion region 111 and the polysiliconelectrode 105. The emitter layer 110 further comprises germanium and theconcentration of the germanium is graded such it ramps up between thefirst side 113 of the emitter layer that is adjacent to the base layer103 and the second side 114 that is adjacent to the polysiliconelectrode 105. Referring to FIGS. 2 a-c in combination with FIG. 1,various graded germanium concentration profiles are anticipated. Forexample, referring to FIG. 2 a,the gradient 204 of the germaniumconcentration can increase linearly and can range from approximately 0%adjacent to the base layer 103 (i.e., at the junction 122) up to between10% and 40% adjacent to the polysilicon electrode 105 (at the topsurface 114 of the emitter layer 110) (e.g., preferably up toapproximately 30% but no greater than 40%). Referring to FIG. 2 b,thegradient 204 of the germanium concentration can also increaseexponentially and can range from approximately 0% adjacent to the baselayer 103 up to between 10% and 40% adjacent to the polysiliconelectrode 105 (e.g., preferably up to approximately 30% but no greaterthan 40%). Alternatively, referring to gradient 204 of FIG. 2 c,theconcentration of germanium can plateau at approximately 0% adjacent tothe base layer 103 and can then ramp up from approximately 0% up tobetween 10% and 40% adjacent to the polysilicon electrode 105. Thisgraded germanium concentration profile across the emitter layer 110creates a quasi-drift field 180 through the neutral region 112 of theemitter layer 110. This emitter layer quasi-drift field 180 acceleratesthe minority carriers (e.g., holes in a n-type emitter) within theneutral region 112 and, thereby, increase the cut-off frequency (f_(T))of the HBT 100. As illustrated in the energy band diagram of FIG. 3A,without such a quasi-drift field the valence energy bandgap 301 a in theemitter layer 110 is constant. However, referring to the energy banddiagram of FIG. 3B, the quasi-drift field in the emitter layer 110 ofthe HBT structure 100 induces a grading in the valence energy bandgap301 b across the neutral region so as to accelerate movement of minoritycarriers (e.g., holes) from the base layer 103 through the emitter layer110 and, thereby, further increase the cut-off frequency (f_(T)) of theHBT structure 100.

Specifically, for a SiGe HBT the cut-off frequency (f_(T)) can bewritten as: fT=½[1/gm (C_(eb)+C_(cb))+T_(b)+T_(e)+T_(bc)]−1, whereC_(eb) is the parasitic emitter-base junction capacitance, C_(cb) is theparasitic collector-base junction capacitance, g_(m) is transductance,T_(b) is the base transit time, T_(e) is the emitter delay time andT_(bc) is the base-collector junction depletion layer time (see J.D.Cressler, “SiGe HBT technology: A new contender for si-based RF andmicrowave circuit applications,” IEEE Transactions On Microwave Theoryand Techniques, vol. 46, no. 5, pp.572-589, May 1998 (incorporatedherein by reference)).

Additionally, the emitter delay time for a SiGe HBT can be written as:

T_(e)=(1/β)* [(W_(e)/S_(pe))+(W_(e)2/2D_(pe))], where Te is the emittertime delay, β is ac current gain, W_(e) is neutral emitter width, S_(pe)is hole surface recombination velocity at the emitter-polysiliconinterface, and D_(pe) is hole diffusivity in the emitter. (See J.D.Cressler and G. Niu, Silicon-Germanium Heterojunction BipolarTransistors, Artech House, Boston, MA December 2003, page 170).

Consequently, by introducing a germanium ramp in the emitter, D_(pe) iseffectively increased by a factor related to the germanium-inducedbandgap grading across the neutral emitter. By increasing D_(pe) theemitter time delay component T_(e) of the forward transit time isreduced.

Finally, by reducing T_(e), the cut-off frequency (f_(T)) is increased.

Referring to FIG. 4 in combination with FIG. 1, an embodiment of themethod of forming the hetero-junction bipolar transistor (HBT) structure100 of the invention comprises forming a first conductivity typecollector layer 102 (402). For example, a buried collector layer 102 canbe formed by ion-implanting an n-type dopant (e.g., arsenic (As),phosphorus (P), or antimony (Sb)) into a p-type silicon substrate.

An electrode (e.g., an n-doped polysilicon electrode, not shown) can beformed during subsequent processing to contact the collector layer 102.

After forming the collector layer 102, shallow trench isolationstructures 501 can be formed to define regions of the collector layer102.

Then, a mono-crystalline silicon layer 190 is deposited (e.g., grown byperforming a conventional low temperature thermal epitaxy process) onthe collector layer 102 (404, see FIG. 5). During this depositionprocess (404), a silicon buffer layer 191, a lower portion 192 of thesilicon layer and an upper portion 193 of the silicon layer 190 areformed (see FIG. 6).

The silicon buffer layer 191 can first be deposited onto the collectorlayer. This buffer layer 191 provides a pure silicon interface (aninterface in the absence of germanium or other impurities) between thecollector layer 102 (e.g., the n-type collector layer) and thesubsequently formed base layer 103.

After the buffer layer 191 is deposited, germanium can be introducedinto the lower portion 192 of the silicon layer 190 as it is deposited(406). Specifically, germanium can be introduced with a rapid ramp up201 in the germanium concentration (e.g., up to approximately 30% andpreferably no more than 40%) (see FIG. 2). After the ramp up phase, theconcentration of germanium introduced into the lower portion 192 of thesilicon layer 190 can plateau 202 for a period of time and then, begin aslow ramp down 203 to approximately 0% germanium (see FIG. 2). After thestart and before the finish of the ramp down phase, a secondconductivity type dopant (e.g., a p-type dopant, such as boron (B)) cansimultaneously be introduced into the lower portion 192 of the siliconlayer 190. The deposition processes, described above, for the lowerportion 192 of the silicon layer 190 effectively form the secondconductivity type base layer 103 (e.g., p-type base layer) of the HBT100 of the invention.

After the lower portion 192 of the silicon layer 190 is doped (e.g.,with the p-type dopant) and the germanium concentration is ramped down,the deposition of the silicon layer 190 continues in order to form anupper portion 193. During the deposition of the upper portion 193 of thesilicon layer 190, germanium is again introduced into the silicon layer190 (410).

Specifically, germanium is introduced into the upper portion of thesilicon layer such that the concentration of germanium is graded (410,see FIGS. 2 a-2 c). For example, referring to FIG. 2 a,the germaniumconcentration 204 can be increased linearly as the silicon is depositedsuch that the concentration (e.g., steadily ramping up fromapproximately 0% adjacent to the base layer up to between 10% and 40% atthe top surface of the upper portion) (411). Referring to FIG. 2 b,thegermanium concentration 204 can be increased exponentially as siliconlayer is deposited (e.g., slowly and then more quickly ramping up fromapproximately 0% adjacent to the base layer up to between 10% and 40% atthe top surface of the upper portion) (412). Alternatively, thegermanium concentration 204 can be maintained at approximately 0%adjacent to the base layer and can then ramp up from approximately 0% upto between 10% and 40% at the top surface of the upper portion (413).

Optionally, in addition to introducing germanium into the upper portionof the silicon layer as it is deposited, an in-situ doping process cansimultaneously be performed in order to also introduce a firstconductivity type dopant (e.g., an n-type dopant such as arsenic (As),phosphorus (P), or antimony (Sb)) into the upper portion of the siliconlayer, and thereby, form the emitter layer with a first conductivitytype (414). Alternatively, this first conductivity type dopant can beintroduced during subsequent processing, discussed below.

Once the silicon layer 190 is deposited, additional well-knownprocessing steps may be performed in order to form defined raisedextrinsic base layers 104 above each end of the intrinsic base layer 103as well as electrodes to the raised extrinsic base layers 104.

A first conductivity type polysilicon layer 105 (e.g., a polysiliconlayer doped with an n-type dopant, such as arsenic (As), phosphorus (P),or antimony (Sb)) can be formed adjacent to the upper portion 193 of thesilicon layer 190 (416, see FIG. 7) between the raised extrinsic baselayers 104. Known methods may be used to form this polysilicon layer105. For example, the polysilicon emitter electrode 105 may beself-aligned between dielectric spacers 107 that are formed adjacent tothe raised extrinsic bases 104.

If in-situ doping is not used to form the emitter layer (at process 414discussed above), then, a thermal anneal process can be performed inorder to diffuse the first conductivity type dopant from the dopedpolysilicon layer 105 into the upper portion 193 of the silicon layer inorder to form the first conductivity type emitter layer 110 (e.g.,n-type emitter layer) of the HBT structure 100 of the invention.

Referring again to FIG. 1 and particularly, to the exploded portion 150of FIG. 1, by forming the emitter layer 110, as described above, theemitter layer 110 is formed with a depletion region 111 at the junction122 between the base layer 103 and the emitter layer 110 and a neutralemitter region 112 between the depletion region 111 and the polysiliconlayer 105 (i.e., the polysilicon emitter electrode) that contains aquasi-drift field 180 created by the graded germanium concentration. Thequasi-drift field in the emitter layer reduces the emitter delay timeand, thereby, increases the current-gain cut-off frequency (f_(T)) andthe maximum oscillation frequency (f_(MAX)) of the resultant HBT.

Therefore, disclosed above are an improved hetero-junction bipolartransistor (HBT) structure and a method of forming the structure thatincorporates a silicon-germanium emitter layer with a graded germaniumprofile. The graded germanium profile creates a quasi-drift field in theneutral region of the emitter layer. This quasi-drift field inducesvalence bandgap grading within the emitter layer so as to acceleratemovement of holes from the base layer through the emitter layer.Accelerated movement of the holes from the base layer through theemitter layer reduces emitter delay time and thereby, increases thecut-off frequency (f_(T)) and the maximum oscillation frequency(f_(MAX)) of the resultant HBT.

While the invention has been described in terms of embodiments, thoseskilled in the art will recognize that the invention can be practicedwith modification within the spirit and scope of the appended claims.

1-2. (canceled)
 3. A hetero-junction bipolar transistor comprising: amono-crystalline silicon-germanium emitter layer with a first side and asecond side and having a first conductivity type; a mono-crystallinebase layer adjacent to said first side and having a second conductivitytype; and a polysilicon electrode adjacent to said second side andhaving said first conductivity type, wherein said emitter layercomprises germanium and wherein concentration of said germanium in saidemitter layer is graded such that said concentration increases betweensaid first side and said second side, wherein said concentrationincreases exponentially from approximately 0% adjacent to said firstside up to between 10% and 40% adjacent to said second side. 4.(canceled)
 5. The hetero-junction bipolar transistor of claim 3, whereinsaid emitter layer further comprises a depletion region adjacent to saidbase layer and a neutral region between said depletion region and saidpolysilicon electrode, and wherein said neutral region comprises aquasi-drift field created by said germanium.
 6. The hetero-junctionbipolar transistor of claim 3, wherein said quasi-drift field inducesvalence bandgap grading of said emitter layer so as to acceleratemovement of minority carriers from said base layer through said emitterlayer and increase cut-off frequency. 7-8. (canceled)
 9. Ahetero-junction bipolar transistor comprising: an n-typemono-crystalline silicon-germanium emitter layer with a first side and asecond side; a p-type mono-crystalline base layer adjacent to said firstside; and an n-type polysilicon electrode adjacent to said second side,wherein said emitter layer comprises germanium and wherein concentrationof said germanium in said emitter layer is graded such that saidconcentration increases between said first side and said second side,wherein said concentration increases exponentially from approximately 0%adjacent to said first side up to between 10% and 40% adjacent to saidsecond side.
 10. (canceled)
 11. The hetero-junction bipolar transistorof claim 9, wherein said emitter layer further comprises a depletionregion adjacent to said base layer and a neutral region between saiddepletion region and said polysilicon electrode, and wherein saidneutral region comprises a quasi-drift field created by said germanium.12. The hetero-junction bipolar transistor of claim 9, wherein saidquasi-drift field induces valence bandgap grading of said emitter layerso as to accelerate movement of holes from said base layer through saidemitter layer and increase cut-off frequency.
 13. (canceled)
 14. Themethod of claim 16, wherein said depositing comprises performing a lowtemperature epitaxy process.
 15. (canceled)
 16. A method of forming ahetero-junction bipolar transistor comprising: providing a collectorlayer having a first conductivity type; depositing a mono-crystallinesilicon layer on said collector layer: during said depositing, doping alower portion of said silicon layer with a second conductivity typedopant to form a base layer having a second conductivity type; andduring said depositing and after said doping, introducing germanium intoan upper portion of said silicon layer in such that a concentration ofsaid germanium in said upper portion is graded, wherein said introducingof said germanium further comprises exponentially increasing saidconcentration of said germanium as said silicon layer is deposited. 17.(canceled)
 18. The method of claim 16, further comprising forming apolysilicon layer on said silicon layer, wherein a depletion region ofan emitter layer is formed adjacent to said base layer and wherein saidgermanium creates a quasi-drift field in a neutral region of saidemitter layer that is formed between said depletion region and saidpolysilicon layer.
 19. The method of claim 16, further comprising,during said depositing, introducing germanium into said lower portion ofsaid silicon layer.
 20. (canceled)